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  Datasheet File OCR Text:
 Central
PROCESS DETAILS Die Size Die Thickness
TM
PROCESS
CP178
Semiconductor Corp.
NPN Darlington Transistor
Power Transistor
131 x 131 MILS 12.5 1.0 MILS 27 x 36 MILS 20 x 37 MILS Al - 50,000A Ag - 10,000A
Emitter Bonding Pad Area Base Bonding Pad Area Top Side Metalization Back Side Metalization
GEOMETRY PRINCIPAL DEVICE TYPES 2N6059
BACKSIDE COLLECTOR BACKSIDE COLLECTOR 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com
R0 (12 -June 2003)


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